SEU error signature analysis of Gbit/s SiGe logic circuits using a pulsed laser microprobe

Akil K. Sutton, Ramkumar Krithivasan, Paul W. Marshall, Martin A. Carts, Christina Seidleck, Ray Ladbury, John D. Cressler, Cheryl J. Marshall, Steve Currie, Robert A. Reed, Guofu Niu, Barbara Randall, Karl Fritz, Dale McMorrow, Barry Gilbert

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


We present, for the first time, an analysis of the error signatures captured during pulsed laser microprobe testing of high-speed digital SiGe logic circuits. 127-bit shift registers, configured using various circuit level latch hardening schemes and incorporated into the circuit for radiation effects self test serve as the primary test vehicle. Our results indicate significant variations in the observed upset rate as a function of strike location and latch architecture. Error information gathered on the sensitive transistor nodes within the latches and characteristic upset durations agree well with recently reported heavy-ion microprobe data. These results support the growing credibility in using pulsed laser testing as a lower-cost alternative to heavy-ion microprobe analysis of sensitive device and circuit nodes, as well as demonstrate the efficiency of the autonomous detection and error approach for high speed bit-error rate testing. Implications for SEU hardening in SiGe are addressed and circuit-level and device-level Radiation Hardening By Design recommendations are made.

Original languageEnglish (US)
Pages (from-to)3277-3284
Number of pages8
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - Dec 2006


  • Built-in self-test
  • Circuit level hardening
  • High-speed bit-error rate testing
  • Pulsed laser testing
  • Silicon-germanium (SiGe)
  • Single-event effects (SEU)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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