Abstract
Gallium nitride nanofilms grown within nanochannels of Na-4 mica structure, exhibit ferromagnetism even at room temperature due to the presence of gallium vacancies at the surfaces of the nanofilms. These nanofilms also show a ferroelectric behavior at room temperature ascribed to a small distortion in the crystal structure of GaN due to its growth within the Na-4 mica nanochannels. A colossal increase in 338% in dielectric constant was observed for an applied magnetic field of 26 kOe. The magnetoelectric effect is ascribed to magnetostriction of magnetic GaN phase.
Original language | English (US) |
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Article number | 093109 |
Journal | Applied Physics Letters |
Volume | 96 |
Issue number | 9 |
DOIs | |
State | Published - 2010 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)