Multiferroic GaN nanofilms grown within Na-4 mica channels

Santanu Bhattacharya, A. Datta, D. Chakravorty

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


Gallium nitride nanofilms grown within nanochannels of Na-4 mica structure, exhibit ferromagnetism even at room temperature due to the presence of gallium vacancies at the surfaces of the nanofilms. These nanofilms also show a ferroelectric behavior at room temperature ascribed to a small distortion in the crystal structure of GaN due to its growth within the Na-4 mica nanochannels. A colossal increase in 338% in dielectric constant was observed for an applied magnetic field of 26 kOe. The magnetoelectric effect is ascribed to magnetostriction of magnetic GaN phase.

Original languageEnglish (US)
Article number093109
JournalApplied Physics Letters
Issue number9
StatePublished - 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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