An overlay interconnect technology for 1 GHz and above MCMs

M. Gdula; W. P. Kornrumpf; B. K. Gilbert

doi:10.1109/MCMC.1992.201477

An overlay interconnect technology for 1 GHz and above MCMs

M. Gdula, W. P. Kornrumpf, B. K. Gilbert

Physiology & Biomedical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

An overlay interconnect technology is presented that is suitable for 1 GHz and above operation of GaAs and Si multichip module (MCM) circuits. This technology encompasses a back side bonded, chips first approach with an adaptive laser photolithography defined multilayer overlay interconnect providing consistent line impedances with low crosstalk and signal delay. Signal propagation velocities of 18 cm/ns have been demonstrated on lines with an insertion loss of 0.25 dB/cm at 10 GHz. This interconnect system has been used to interconnect GaAs digital circuits operating at clock frequencies of 2.0 GHz without power supply bypass capacitors.

Original language	English (US)
Title of host publication	Proceedings 1992 IEEE Multi-Chip Module Conference MCMC-92
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	171-174
Number of pages	4
ISBN (Electronic)	0818627255, 9780818627255
DOIs	https://doi.org/10.1109/MCMC.1992.201477
State	Published - Jan 1 1992
Event	1992 IEEE Multi-Chip Module Conference, MCMC 1992 - Santa Cruz, United States Duration: Mar 18 1992 → Mar 20 1992

Publication series

Name	Proceedings 1992 IEEE Multi-Chip Module Conference MCMC-92

Conference

Conference	1992 IEEE Multi-Chip Module Conference, MCMC 1992
Country/Territory	United States
City	Santa Cruz
Period	3/18/92 → 3/20/92

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/MCMC.1992.201477

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An overlay interconnect technology for 1 GHz and above MCMs. / Gdula, M.; Kornrumpf, W. P.; Gilbert, B. K.
Proceedings 1992 IEEE Multi-Chip Module Conference MCMC-92. Institute of Electrical and Electronics Engineers Inc., 1992. p. 171-174 201477 (Proceedings 1992 IEEE Multi-Chip Module Conference MCMC-92).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Gdula, M, Kornrumpf, WP & Gilbert, BK 1992, An overlay interconnect technology for 1 GHz and above MCMs. in Proceedings 1992 IEEE Multi-Chip Module Conference MCMC-92., 201477, Proceedings 1992 IEEE Multi-Chip Module Conference MCMC-92, Institute of Electrical and Electronics Engineers Inc., pp. 171-174, 1992 IEEE Multi-Chip Module Conference, MCMC 1992, Santa Cruz, United States, 3/18/92. https://doi.org/10.1109/MCMC.1992.201477

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abstract = "An overlay interconnect technology is presented that is suitable for 1 GHz and above operation of GaAs and Si multichip module (MCM) circuits. This technology encompasses a back side bonded, chips first approach with an adaptive laser photolithography defined multilayer overlay interconnect providing consistent line impedances with low crosstalk and signal delay. Signal propagation velocities of 18 cm/ns have been demonstrated on lines with an insertion loss of 0.25 dB/cm at 10 GHz. This interconnect system has been used to interconnect GaAs digital circuits operating at clock frequencies of 2.0 GHz without power supply bypass capacitors.",

author = "M. Gdula and Kornrumpf, {W. P.} and Gilbert, {B. K.}",

year = "1992",

month = jan,

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doi = "10.1109/MCMC.1992.201477",

language = "English (US)",

series = "Proceedings 1992 IEEE Multi-Chip Module Conference MCMC-92",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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N2 - An overlay interconnect technology is presented that is suitable for 1 GHz and above operation of GaAs and Si multichip module (MCM) circuits. This technology encompasses a back side bonded, chips first approach with an adaptive laser photolithography defined multilayer overlay interconnect providing consistent line impedances with low crosstalk and signal delay. Signal propagation velocities of 18 cm/ns have been demonstrated on lines with an insertion loss of 0.25 dB/cm at 10 GHz. This interconnect system has been used to interconnect GaAs digital circuits operating at clock frequencies of 2.0 GHz without power supply bypass capacitors.

AB - An overlay interconnect technology is presented that is suitable for 1 GHz and above operation of GaAs and Si multichip module (MCM) circuits. This technology encompasses a back side bonded, chips first approach with an adaptive laser photolithography defined multilayer overlay interconnect providing consistent line impedances with low crosstalk and signal delay. Signal propagation velocities of 18 cm/ns have been demonstrated on lines with an insertion loss of 0.25 dB/cm at 10 GHz. This interconnect system has been used to interconnect GaAs digital circuits operating at clock frequencies of 2.0 GHz without power supply bypass capacitors.

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ER -

An overlay interconnect technology for 1 GHz and above MCMs

Abstract

Publication series

Conference

ASJC Scopus subject areas

Access to Document

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