Ka-band (35 GHz) 3-stage SiGe HBT low noise amplifier

Paul J. Riemer, Benjamin R. Buhrow, Jonathan D. Coker, Barbara A. Randall, Robert W. Techentin, Barry K. Gilbert, Erik S. Daniel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations


We present design, simulation, and measurement of a Ka-band (35 GHz) low noise amplifier (LNA) fabricated in a 120 GHz ft/fmax SiGe BiCMOS technology (IBM 7HP). To our knowledge, this is the first demonstration of a Ka-band LNA in a SiGe technology, representing the first of a set of desired building blocks for integrating a Ka-band transmit and receive (T/R) module in a single chip environment. At 35 GHz, the 3-stage LNA exhibited 15.1 dB gain, -5.9 dBm output compression (P1dB), 9 dBm third order intercept (IP3), and 5.6 dB noise figure at 25.6 mW DC power. Peak gain and bandwidth of the LNA were found to be 19.0 dB and 10.7 GHz respectively at a center frequency of 31.3 GHz.

Original languageEnglish (US)
Title of host publication2005 IEEE MTT-S International Microwave Symposium Digest
Number of pages4
StatePublished - 2005
Event2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States
Duration: Jun 12 2005Jun 17 2005

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
ISSN (Print)0149-645X


Other2005 IEEE MTT-S International Microwave Symposium
Country/TerritoryUnited States
CityLong Beach, CA


  • 7HP
  • BiCMOS
  • HBT
  • Ka-Band
  • LNA
  • SiGe

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Ka-band (35 GHz) 3-stage SiGe HBT low noise amplifier'. Together they form a unique fingerprint.

Cite this