@article{299c9622f80149d988f0a86d823d128d,
title = "Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode",
abstract = "We present a method of coupling drift-diffusion simulations with quantum transmitting boundary method (QTBM) tunnel current calculations. This allows self-consistent simulation of thin oxide devices in which large tunnel currents can flow. Simulated results are presented for a thin oxide Al/SiO2/Si structure and an Al/SiO2/n-Si/p-Si tunnel switching diode. We demonstrate the careful use of the recombination lifetime as an adjustable or relaxable parameter in order to obtain converging solutions.",
keywords = "Drift-diffusion, QTBM, SRAM, SiO, Silicon, Simulation, TSD, Tunneling",
author = "Daniel, {Erik S.} and Xavier Cartoix{\`a} and Frensley, {William R.} and Ting, {David Z.Y.} and McGill, {T. C.}",
note = "Funding Information: Manuscript received July 15, 1999; revised November 22, 1999. This work was supported by ONR Contract N00014-98-1-0567. The review of this paper was arranged by Editor A. H. Marshak. E. S. Daniel, X. Cartoix{\`a}, D. Z.-Y. Ting, and T. C. McGill are with the T. J. Watson Sr. Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125 USA (e-mail: tcm@ssdp.caltech.edu). W. R. Frensley is with the Eric Jonsson School of Engineering and Computer Science, University of Texas at Dallas, Richardson, TX 75083-0688 USA. Publisher Item Identifier S 0018-9383(00)03415-8.",
year = "2000",
doi = "10.1109/16.841240",
language = "English (US)",
volume = "47",
pages = "1052--1060",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",
}